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| Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifier Key Features * * * * * * * * * TGA4513 27 - 31 GHz Bandwidth > 32 dBm P1dB 33 dBm Psat 20 dB Nominal Gain IMR3 is 37 dBc @ 18 dBm SCL 14 dB Nominal Return Loss Bias: 6 V, 840 mA 0.25 um 3MI MMW pHEMT Technology Chip Dimensions: 2.8 x 2.2 x 0.1 mm (0.110 x 0.087 x 0.004) in Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 25 20 15 10 Gain (dB) 5 0 -5 -10 -15 -20 -25 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) 35 34 33 Pout (dBm) 32 31 30 29 28 26 27 28 29 30 31 32 33 Primary Applications * * * Satellite Ground Terminal Point to Point Radio Point to Multi Point Radio LMDS Gain IRL * ORL Psat P1dB Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 1 Advance Product Information Dec 14, 2004 TGA4513 TABLE I MAXIMUM RATINGS 1/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 7V -3 TO 0 V 1.05 A 10 mA 22 dBm 6.71W 150 C 320 C -65 to 150 C 0 0 0 NOTES 2/ V I + 2/ 3/ IG PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of 70 oC, the median life is 1.0E+6 hrs. Junction iperating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 6/ TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 2 Advance Product Information Dec 14, 2004 TGA4513 TABLE II DC PROBE TESTS (TA = 25 C Nominal) SYMBOL IDSS1 GM1 VBVGS1 VBVGD1 VP1,8 PARAMETER Saturated Drain Current Transconductance Breakdown Voltage gate-source Breakdown Voltage gate-drain Pinch-off Voltage MINIMUM 60 132 -30 -30 -1.5 MAXIMUM 282 318 -8 -11 -0.5 VALUE V mS V V V TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Drain Operating Quiescent Current Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Reverse Isolation, S12 Output Power @ 1 dB Compression Gain, P1dB Power @ saturated, Psat IMR3 @ 18 dBm SCL TYPICAL 6 840 20 14 14 -40 > 32 33 37 UNITS V mA dB dB dB dB dBm dBm dBc TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 6 V ID = 0.84 A (Quiescent) PDISS = 5.04 W Tbase = 70 C TCH (qC) TJC (qC/W) 11.92 TM (hrs) 130.1 5.9 E+6 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 3 Advance Product Information Dec 14, 2004 TGA4513 Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 26 24 22 20 18 Gain (dB) 16 14 12 10 8 6 4 2 0 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) 35 34 Bias Conditions: Vd = 6 V, Id = 40 mA -40 0C 33 P1dB (dBm) 32 31 30 29 28 26 27 28 29 30 31 32 33 Psat +25 0C +70 0C P1dB Frequency (GHz) TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 4 Advance Product Information Dec 14, 2004 TGA4513 Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 0 -2 -4 Input Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) 0 -2 -4 Output Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 5 Advance Product Information Dec 14, 2004 TGA4513 Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 35 30 25 Pout (dBm) 20 15 10 5 0 -6 -4 -2 0 2 4 6 8 10 Pin (dBm) 12 14 16 18 20 Ga in 29GHz 30GHz 31GHz Pout 35 30 P.A.E. 25 20 15 10 5 0 Data @ 30GHz 35 30 25 Pout (dBm) 20 1500 1400 1300 1200 IDS (mA) 6 Pout 15 10 5 0 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 1100 1000 900 800 IDS TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com P.A.E. (%) & Gain (dB) Advance Product Information Dec 14, 2004 TGA4513 Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA, f = 10 MHz 60 55 50 IMR3 (dBc) 45 40 35 30 25 20 6 8 10 12 14 16 18 20 22 24 26 Pout Per Tone (dBm) 29GHz 30GHz 31GHz TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 7 Advance Product Information Dec 14, 2004 TGA4513 Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 8 Advance Product Information Dec 14, 2004 TGA4513 Chip Assembly Diagram(1) VG VD RF Out See note (2) RF In VG VD Note (1): Minimum 1 uF bypass Capacitors are required on both drain and gate power supplies. (2): Alternate configuration without these bondwires: the maximum positive supply current is reduced to 1.3A. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 9 Advance Product Information Dec 14, 2004 TGA4513 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300oC (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200oC. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 10 |
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